Title :
Exciton states in InGaN nano-disks in GaN nanowires revealed using nonlinear laser spectroscopy
Author :
Nelson, C.R. ; Liu, A. ; Deshpande, S. ; Jahangir, S. ; Bhattacharya, P.K. ; Steel, D.G.
Author_Institution :
EECS Dept., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Linear and coherent non-linear resonant high resolution laser spectroscopy was used to characterize In0.54Ga0.46N disks in nanowires. Nonlinear optical spectroscopy and PLE reveal narrow excitonic resonances and evidence of coupling between separate excited states.
Keywords :
III-V semiconductors; excited states; excitons; gallium compounds; indium compounds; nanophotonics; nanowires; nonlinear optics; photoluminescence; wide band gap semiconductors; In0.54Ga0.46N-GaN; exciton states; excitonic resonances; nano-disks; nanowires; nonlinear laser spectroscopy; nonlinear optical spectroscopy; photoluminescence excitation; Excitons; Gallium nitride; Laser excitation; Nanowires; Nonlinear optics; Probes; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
