• DocumentCode
    733352
  • Title

    Electrically pumped random lasing based on Au-ZnO nanowire Schottky junction

  • Author

    Fan Gao ; Morshed, Muhammad M. ; Bashar, Sunayna B. ; Youdou Zheng ; Yi Shi ; Jianlin Liu

  • Author_Institution
    Nat. Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Electrically pumped random lasing based on Au-ZnO nanowire Schottky junction diode is demonstrated. Good lasing behavior is achieved and excitonic recombination is responsible for lasing generation. It provides an alternative approach towards semiconductor random lasers.
  • Keywords
    II-VI semiconductors; Schottky diodes; excitons; gold; integrated optics; integrated optoelectronics; nanophotonics; nanowires; semiconductor lasers; wide band gap semiconductors; zinc compounds; Au-ZnO; electrically pumped random lasing; excitonic recombination; good lasing behavior; lasing generation; nanowire Schottky junction diode; semiconductor random lasers; Gold; II-VI semiconductor materials; Junctions; Lasers; Power generation; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733352