Long-infrared InAs-based quantum cascade lasers

Author

Chastanet, D. ; Bousseksou, A. ; Colombelli, R. ; Lollia, G. ; Bahriz, M. ; Baranov, A.N. ; Teissier, R.

Author_Institution

Inst. d´Electron. Fondamentale, Univ. Paris Sud, Orsay, France

fYear

2015

fDate

10-15 May 2015

Firstpage

1

Lastpage

2

Abstract

This paper develops a new generation of InAs/AlSb based quantum cascade lasers (QCLs) covering the 16-35 μm spectral region. The study targets high performance, in terms of output power, single mode operation and maximum operating temperature. Here, recent developments on InAs/AlSb based QCLs operating at wavelengths of 17-19 μm are reported. The maximum operating temperature achieved is 333 K at λ=17.9 μm. These values represent a new reference at long IR wavelengths. Distributed feedback (DFB) lasers featuring spectrally single mode operation are also reported.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; indium compounds; laser beams; laser modes; quantum cascade lasers; DFB lasers; InAs-AlSb; QCL; distributed feedback lasers; long-infrared InAs-based quantum cascade lasers; maximum operating temperature; output power; spectrally single mode operation; temperature 333 K; wavelength 16 mum to 35 mum; Effective mass; Geometry; Indium gallium arsenide; Optical refraction; Optical waveguides; Quantum cascade lasers; Semiconductor waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2015 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

7184150