Title :
Type-I interband cascade lasers near 3.2μm
Author :
Gupta, J.A. ; Aers, G.C. ; Dupont, E. ; Baribeau, J.-M. ; Wu, X. ; Jiang, Y. ; Li, L. ; Yang, R.Q. ; Johnson, M.B.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, ON, Canada
Abstract :
Interband cascade lasers with type-I InGaAsSb/AlAsSb quantum well active regions were demonstrated. Ridge-waveguide devices exhibit room-temperature continuous-wave emission at 3.2μm, providing a potential alternative to quantum cascade and diode lasers in this wavelength range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum cascade lasers; ridge waveguides; waveguide lasers; InGaAsSb-AlAsSb; ridge-waveguide devices; room-temperature continuous-wave emission; temperature 293 K to 298 K; type-I interband cascade lasers; type-I quantum well active regions; wavelength 3.2 mum; Diode lasers; Optics; Power generation; Quantum cascade lasers; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
