DocumentCode
733952
Title
Room temperature UV-C lasers with nitride microdisks on silicon
Author
Seiles, J. ; Brimont, C. ; Cassabois, G. ; Guillet, T. ; Gayral, B. ; Mexis, M. ; Semond, F. ; Roland, I. ; Zeng, Y. ; Checoury, X. ; Boucaud, P.
Author_Institution
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We demonstrate room temperature lasing in the UV-C spectral range (-275 nm) with nitride microdisks. The nitride materials are directly grown on a silicon substrate. The active region consists of ultra-thin GaN/AIN quantum wells and is a promising alternative to the most investigated designs based on AlGaN quantum wells grown on complex buffer layers.
Keywords
aluminium compounds; gallium compounds; laser beams; microdisc lasers; nitrogen; quantum well lasers; semiconductor quantum wells; silicon; AlGaN; AlGaN quantum wells; GaN-AlN; Si; UV-C lasers; UV-C spectral range; complex buffer layers; nitride materials; nitride microdisks on silicon; room temperature lasing; silicon substrate; temperature 293 K to 298 K; ultrathin GaN-AIN quantum wells; wavelength 275 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184396
Link To Document