Effect of doping to the pore structure and pore diameter on silicon membrane surface

This paper studies parameters which affect the pore diameter of silicon membranes. The fabrication process starts with thinning the silicon substrate to get a membrane thickness of 8 μm. An electrochemical etch is carried out to produce the pores on the silicon membrane surface. The main parameter studied is the type of doping of the silicon substrate, which could be un-doped, phosphorus doped or boron doped. The pore geometry and pore diameter are observed in this experimental setup to clarify the effect of doping on the silicon substrate. Due to this setup, the development of nanoporous silicon membrane can be used in micro/nano filtration especially in bioMEMS applications.