DocumentCode
736214
Title
Driving capability of SG FinFET and IG FinFET
Author
Dubey, Ankja ; Gill, Sandeep Singh
Author_Institution
GNDEC, Ludhiana, India
fYear
2015
fDate
24-25 Jan. 2015
Firstpage
1
Lastpage
6
Abstract
With the downscaling of the MOSFETs it was not possible to further improve the performance of transistors. FinFET provides the best alternative to the classical planar CMOS technology. Because scaling of CMOS technology leads to saturated performance and increased statistical variability. There are various MUGFETs available like Quadruple-Gate FETs, GAA FETs but FinFET provides best alternative so far. These have fully depleted channel so called as DELTA FET also. Shorted Gate FinFET provides better drive current than Independent Gate mode.
Keywords
CMOS integrated circuits; FinFETs; Logic gates; Metals; Threshold voltage; Dual Gate FinFET; Independent Gate FinFET (IG-FinFET); Shorted Gate FinFET (SG-FinFET); Silicon-on-Insulator (SOI); TCAD; Work function;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical, Electronics, Signals, Communication and Optimization (EESCO), 2015 International Conference on
Conference_Location
Visakhapatnam, India
Print_ISBN
978-1-4799-7676-8
Type
conf
DOI
10.1109/EESCO.2015.7253742
Filename
7253742
Link To Document