• DocumentCode
    736214
  • Title

    Driving capability of SG FinFET and IG FinFET

  • Author

    Dubey, Ankja ; Gill, Sandeep Singh

  • Author_Institution
    GNDEC, Ludhiana, India
  • fYear
    2015
  • fDate
    24-25 Jan. 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    With the downscaling of the MOSFETs it was not possible to further improve the performance of transistors. FinFET provides the best alternative to the classical planar CMOS technology. Because scaling of CMOS technology leads to saturated performance and increased statistical variability. There are various MUGFETs available like Quadruple-Gate FETs, GAA FETs but FinFET provides best alternative so far. These have fully depleted channel so called as DELTA FET also. Shorted Gate FinFET provides better drive current than Independent Gate mode.
  • Keywords
    CMOS integrated circuits; FinFETs; Logic gates; Metals; Threshold voltage; Dual Gate FinFET; Independent Gate FinFET (IG-FinFET); Shorted Gate FinFET (SG-FinFET); Silicon-on-Insulator (SOI); TCAD; Work function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical, Electronics, Signals, Communication and Optimization (EESCO), 2015 International Conference on
  • Conference_Location
    Visakhapatnam, India
  • Print_ISBN
    978-1-4799-7676-8
  • Type

    conf

  • DOI
    10.1109/EESCO.2015.7253742
  • Filename
    7253742