• DocumentCode
    738467
  • Title

    Designs of K-Band Divide-by-2 and Divide-by-3 Injection-Locked Frequency Divider With Darlington Topology

  • Author

    Kuan-Hsiu Chien ; Jian-Ying Chen ; Hwann-Kaeo Chiou

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
  • Volume
    63
  • Issue
    9
  • fYear
    2015
  • Firstpage
    2877
  • Lastpage
    2888
  • Abstract
    This paper presents divide-by-2 and divide-by-3 injection-locked frequency dividers (ILFDs) using a Darlington cell in a TSMC 0.18- μm CMOS process. The Darlington cell has higher transconductance than the traditional cross-coupled common source cell for free-running oscillator that reduces the power consumption of ILFDs. Besides, an LC resonance technique is used in the proposed divide-by-2 ILFD to achieve lower power consumption and wide locking range. This work provides an analytic method to choose the injector size for widening the locking range and lowering the power consumption. The measured locking range of the proposed divide-by-2 ILFD is from 20.5 to 22.9 GHz. The measured operation range of the divide-by-3 ILFD is from 24.71 to 28 GHz. The measured phase noises of two dividers under locked condition are -138.3 and -140.35 dBc/Hz at an offset of 1 MHz when the input referred signals have phase noises of -132.54 and -131.5 dBc/Hz, respectively. Meanwhile, both phase noise differences with respect to injection signal are 5.76 and 8.85 dBc, which are close to the theoretical values of 6 and 9.5 dBc. The core power consumptions are 1.73 and 5.13 mW with the supply voltages of 1.2 and 1.45 V, and the chip sizes are 0.8 × 0.75 mm 2 and 0.77 × 0.79 mm 2, respectively.
  • Keywords
    CMOS integrated circuits; LC circuits; frequency dividers; microwave oscillators; phase noise; Darlington topology; K-band injection-locked frequency divider; LC resonance technique; TSMC CMOS process; complementary metal oxide semiconductor; cross-coupled common source cell; divide-by-2 ILFD; divide-by-3 ILFD; free-running oscillator; frequency 24.71 GHz to 28 GHz; locking range; phase noise; power 1.73 mW; power 5.13 mW; power consumption reduction; size 0.18 mum; transconductance; voltage 1.2 V; voltage 1.45 V; Frequency conversion; Mathematical model; Oscillators; Q-factor; Topology; Transconductance; Transistors; CMOS process; Darlington cell; LC resonance technique; injection-locked frequency divider (ILFD); single and differential injectors;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2015.2449853
  • Filename
    7159090