DocumentCode
738467
Title
Designs of K-Band Divide-by-2 and Divide-by-3 Injection-Locked Frequency Divider With Darlington Topology
Author
Kuan-Hsiu Chien ; Jian-Ying Chen ; Hwann-Kaeo Chiou
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume
63
Issue
9
fYear
2015
Firstpage
2877
Lastpage
2888
Abstract
This paper presents divide-by-2 and divide-by-3 injection-locked frequency dividers (ILFDs) using a Darlington cell in a TSMC 0.18- μm CMOS process. The Darlington cell has higher transconductance than the traditional cross-coupled common source cell for free-running oscillator that reduces the power consumption of ILFDs. Besides, an LC resonance technique is used in the proposed divide-by-2 ILFD to achieve lower power consumption and wide locking range. This work provides an analytic method to choose the injector size for widening the locking range and lowering the power consumption. The measured locking range of the proposed divide-by-2 ILFD is from 20.5 to 22.9 GHz. The measured operation range of the divide-by-3 ILFD is from 24.71 to 28 GHz. The measured phase noises of two dividers under locked condition are -138.3 and -140.35 dBc/Hz at an offset of 1 MHz when the input referred signals have phase noises of -132.54 and -131.5 dBc/Hz, respectively. Meanwhile, both phase noise differences with respect to injection signal are 5.76 and 8.85 dBc, which are close to the theoretical values of 6 and 9.5 dBc. The core power consumptions are 1.73 and 5.13 mW with the supply voltages of 1.2 and 1.45 V, and the chip sizes are 0.8 × 0.75 mm 2 and 0.77 × 0.79 mm 2, respectively.
Keywords
CMOS integrated circuits; LC circuits; frequency dividers; microwave oscillators; phase noise; Darlington topology; K-band injection-locked frequency divider; LC resonance technique; TSMC CMOS process; complementary metal oxide semiconductor; cross-coupled common source cell; divide-by-2 ILFD; divide-by-3 ILFD; free-running oscillator; frequency 24.71 GHz to 28 GHz; locking range; phase noise; power 1.73 mW; power 5.13 mW; power consumption reduction; size 0.18 mum; transconductance; voltage 1.2 V; voltage 1.45 V; Frequency conversion; Mathematical model; Oscillators; Q-factor; Topology; Transconductance; Transistors; CMOS process; Darlington cell; LC resonance technique; injection-locked frequency divider (ILFD); single and differential injectors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2015.2449853
Filename
7159090
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