Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

An analytical model for a novel triple reduced surface field (RESURF) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with a low on-resistance n-type top (N-top) layer is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF LDMOS is presented by solving the 2-D Poisson´s equation, which can also be applied in single, double, and conventional triple RESURF structures. The vertical and lateral breakdown voltages are formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of the N-top layer (Q_ntop) is derived which can give a guidance for the dose of N-top layer. The triple RESURF LDMOS with a low on-resistance N-top layer is designed and manufactured according to the analytical model. All the analytical results can be well verified by numerical and measured results, showing the validity of the presented model.