Effects of Channel Width on High-Frequency Characteristics of Trigate Poly-Si Thin-Film Transistors Fabricated by Microwave Annealing

Author

Hsin-Hui Hu ; Kai-Min Wang

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

Volume

62

Issue

9

fYear

2015

Firstpage

2883

Lastpage

2887

Abstract

In this paper, the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) is analyzed using low-temperature microwave annealing. The variation of the cutoff frequency and the maximum oscillation frequency with the width of the channel wire is investigated. A poly-Si TFT with a short channel and a narrow channel wire, annealed using microwave, has a high driving current, a good gate controllability, and a better high-frequency performance than one that annealed by rapid thermal annealing.

Keywords

elemental semiconductors; rapid thermal annealing; semiconductor thin films; silicon; thin film transistors; Si; channel width; cutoff frequency; high-frequency characteristics; low-temperature microwave annealing; narrow channel wire; oscillation frequency; rapid thermal annealing; short channel; trigate polycrystalline silicon thin-film transistors; Annealing; Capacitance; Logic gates; Microwave transistors; Radio frequency; Thin film transistors; Wires; Gate geometry; microwave annealing (MWA); polycrystalline silicon thin-film transistors (poly-Si TFTs); radio frequency (RF); radio frequency (RF).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2456235

Filename

7173027