Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Author

Xi Lin ; Xiao-Yong Liu ; Chun-Min Zhang ; Lei Liu ; Jin-Shan Shi ; Shuai Zhang ; Wen-Bo Wang ; Wei-Hai Bu ; Jun Wu ; Yi Gong ; Peng-Fei Wang ; Han-Ming Wu ; Zhang, David-Wei

Author_Institution

Collaborative Innovation Center of IC Design & Manuf. in Yangtze River Delta, Fudan Univ., Shanghai, China

Volume

62

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

1177

Lastpage

1183

Abstract

A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85 °C. The device scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice model for circuit design is also developed. Finally, a memory array with the specific peripheral circuits is designed using the device model developed in this paper.

Keywords

integrated circuit modelling; integrated memory circuits; device scalability; high-temperature behavior; macrodevice model; memory array; peripheral circuit; semifloating-gate transistor memory cell modeling; temperature 85 C; temperature dependence; Arrays; Current measurement; Integrated circuit modeling; SPICE; Scalability; Simulation; Temperature measurement; Device scalability; macromodel; semifloating-gate transistor (SFGT); temperature dependency; temperature dependency.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2398457

Filename

7046424