Title :
InAs Diodes Fabricated Using Be Ion Implantation
Author :
White, Benjamin S. ; Sandall, Ian C. ; David, John P. R. ; Chee Hing Tan
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.
Keywords :
III-V semiconductors; annealing; indium compounds; ion implantation; semiconductor diodes; semiconductor doping; InAs; annealing conditions; ion implantation; planar diodes; Annealing; Dark current; Implants; Ion implantation; Schottky diodes; Temperature; Annealing; indium arsenide; ion implantation; photodiode; photodiode.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2456434
