Title :
Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor
Author :
El Hajjam, Khalil G. ; Bounouar, Mohamed Amine ; Baboux, Nicolas ; Ecoffey, Serge ; Guilmain, Marc ; Puyoo, Etienne ; Francis, Laurent A. ; Souifi, Abdelkader ; Drouin, Dominique ; Calmon, Francis
Author_Institution :
Inst. Nat. des Sci. Appl. de Lyon, Lyon Nanotechnol. Inst., Villeurbanne, France
Abstract :
The development of metallic single-electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions (TJs). These TJs should insure high-ON current, low-OFF current, and low capacitance. We propose an engineered TJ based on multidielectric stacking. A number of high-k and low-k materials were considered to optimize the TJ´s characteristics. The optimized TJ is proven to increase the ION current and the ION/IOFF ratio in a double-gate SET. Using TiO2 plasma oxidation and Al2O3 atomic layer deposition, an SET proof of concept, with a double layer TJ, was fabricated and characterized.
Keywords :
aluminium compounds; atomic layer deposition; high-k dielectric thin films; low-k dielectric thin films; oxidation; single electron transistors; titanium compounds; Al2O3; TiO2; atomic layer deposition; double-gate SET; electrical properties; high-k materials; low-k materials; multidielectric stacking; optimized metallic single-electron transistor; plasma oxidation; tunnel junction downscaling; tunnel junction engineering; Aluminum oxide; Capacitance; Dielectrics; Electric potential; Junctions; Logic gates; Mathematical model; Multilayer tunnel dielectrics; single-electron transistor (SET); tunnel junction (TJ) engineering; tunnel junction (TJ) engineering.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2452575
