Title :
Integratable trench MOSFET with ultra-low specific on-resistance
Author :
Chao Yin ; Jie Wei ; Kun Zhou ; Xiaorong Luo
Author_Institution :
State Key Lab. of Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel integratable metal-oxide-semiconductor field-effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS-TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N-drift doping concentration (Nd). Moreover, an accumulation layer beside the TG is formed and offers a continuous low-resistance path in the on-state. Therefore, the novel MOSFET effectively reduces specific on-resistance (Ron,sp). The TS-TG MOSFET not only has the merits of low Ron,sp and the easy parallel connection of vertical double-diffused MOS, but also possesses the advantage of ease of integration like the LDMOS. The breakdown voltage (BV) of 61 V and the Ron,sp of 0.133 mΩ cm2 are obtained for the TS-TG MOSFET, with a significant optimised trade-off between Ron,sp and BV.
Keywords :
MOSFET; electric breakdown; semiconductor doping; BV; LDMOS; N-drift doping concentration; TG; TS; accumulation layer; assistant depletion effect; breakdown voltage; integratable trench MOSFET; metal-oxide-semiconductor field-effect transistor; on-state; parallel connection; trench gate; trench source; ultra-low specific on-resistance; vertical double-diffused MOS; voltage 61 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1493