DocumentCode
740189
Title
Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser
Author
Kryzhanovskaya, N.V. ; Moiseev, E.I. ; Kudashova, Yu.V. ; Zubov, F.I. ; Lipovskii, A.A. ; Kulagina, M.M. ; Troshkov, S.I. ; Zadiranov, Yu.M. ; Livshits, D.A. ; Maximov, M.V. ; Zhukov, A.E.
Author_Institution
St. Petersburg Acad. Univ., St. Petersburg, Russia
Volume
51
Issue
17
fYear
2015
Firstpage
1354
Lastpage
1355
Abstract
A 31 μm in diameter microdisk laser with an InAs/InGaAs quantum dot active region has been tested in the continuous-wave regime at elevated temperatures. Lasing is achieved up to 100°C with a threshold current of 13.8 mA. The emission spectrum demonstrates single-mode lasing at 1304 nm with a side mode suppression ratio of 24 dB and a dominant mode linewidth of 35 pm.
Keywords
gallium arsenide; indium compounds; laser modes; microdisc lasers; quantum dot lasers; InAs-InGaAs; continuous wave lasing; continuous wave regime; current 13.8 mA; dominant mode linewidth; emission spectrum; quantum dot active region; quantum dot microdisk diode laser; side mode suppression ratio; single-mode lasing; size 31 mum; temperature 100 degC; threshold current; wavelength 1.3 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.2325
Filename
7199758
Link To Document