• DocumentCode
    740199
  • Title

    Comment on “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”

  • Author

    Cheng-fu Chen ; Zhili Quan

  • Author_Institution
    Dept. of Mech. Eng., Univ. of Alaska at Fairbanks, Fairbanks, AK, USA
  • Volume
    62
  • Issue
    9
  • fYear
    2015
  • Firstpage
    3104
  • Lastpage
    3105
  • Abstract
    In the title paper, Janet al. applied the Kane-Mindlin theory to solve the strain field of a unit through silicon via (TSV) model in response to thermal loading ΔT. We comment on this paper by clarifying why the thermal strain αΔT cannot affect the mobility of electrons. We also demonstrate that a 2 × 2 TSV array would suffice to predict the maximum stress.
  • Keywords
    electron mobility; three-dimensional integrated circuits; strain field; thermal strain; through silicon vias; Analytical models; Arrays; Silicon; Strain; Stress; Thermal stresses; Through-silicon vias; Electron mobility; thermal strain; through silicon via (TSV); through silicon via (TSV).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2463256
  • Filename
    7202860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=740199