Title :
High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current
Author :
Panpan Li ; Hongjian Li ; Liancheng Wang ; Xiaoyan Yi ; Guohong Wang
Author_Institution :
Semicond. Lighting R&D Center, Inst. of Semicond., Beijing, China
Abstract :
High quantum efficiency and low efficiency droop of 400-nm InGaN near-ultraviolet (NUV) light-emitting diodes (LEDs) are achieved using Al0.05Ga0.95N quantum barriers and 3-nm thin Al0.3Ga0.7N insertion layer on last barrier before p-Al0.15Ga0.85N electron blocking layer. At 100 A/cm2, for the fabricated 0.1-mm2-size LEDs with special designed barriers, the external quantum efficiency increases from 23.8% to 40.7%, and the efficiency droop ratio decreases from 40.5% to as low as 10.3%, as compared with the conventional NUV LEDs. APSYS simulations reveal that a significant suppressed leakage current is the main reason for the performance enhancement.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; APSYS simulations; InGaN near-ultraviolet light-emitting diodes; InGaN-Al0.05Ga0.95N-Al0.3Ga0.7N-Al0.15Ga0.85N; LED; electron blocking layer; external quantum efficiency; insertion layer; low efficiency droop; quantum barriers; size 3 nm; size 400 nm; suppressed leakage current; Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Lighting; Physics; Radiative recombination; Wide band gap semiconductors; Efficiency droop; leakage current; light emitting diodes; quantum efficiency;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2015.2469097
