• DocumentCode
    741368
  • Title

    A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

  • Author

    Mainali, Krishna ; Tripathi, Awneesh ; Madhusoodhanan, Sachin ; Kadavelugu, Arun ; Patel, Dhaval ; Hazra, Samir ; Hatua, Kamalesh ; Bhattacharya, Subhashish

  • Author_Institution
    Future Renewable Electrical Energy Delivery &..., North Carolina State University, Raleigh, NC 27695 USA
  • Volume
    2
  • Issue
    3
  • fYear
    2015
  • Firstpage
    31
  • Lastpage
    43
  • Abstract
    The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.
  • Keywords
    Insulated gate bipolar transistors; Logic gates; MOSFET; Power harmonic filters; Silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Power Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    2329-9207
  • Type

    jour

  • DOI
    10.1109/MPEL.2015.2449271
  • Filename
    7240109