• DocumentCode
    742835
  • Title

    Multistate Register Based on Resistive RAM

  • Author

    Patel, Ravi ; Kvatinsky, Shahar ; Friedman, Eby G. ; Kolodny, Avinoam

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
  • Volume
    23
  • Issue
    9
  • fYear
    2015
  • Firstpage
    1750
  • Lastpage
    1759
  • Abstract
    In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed. The multistate register is different from conventional types of memory, and is used to store multiple data bits, where only a single bit is active and the remaining data bits are idle. The active bit is stored within a CMOS flip flop, while the idle bits are stored in an RRAM crossbar co-located with the flip flop. It is demonstrated that additional states require an area overhead of 1.4% per state for a 64-state register. The use of multistate registers as pipeline registers is demonstrated for a novel multithreading architecture-continuous flow multithreading (CFMT), where the total area overhead in the CPU pipeline is only 2.5% for 16 threads compared with a single thread CMOS pipeline. The use of multistate registers in the CFMT microarchitecture enables higher performance processors (40% average performance improvement) with relatively low energy (6.5% average energy reduction) and area overhead.
  • Keywords
    CMOS memory circuits; flip-flops; memristor circuits; resistive RAM; CMOS flip flop; memristive technologies; multistate register; multithreading architecture-continuous flow multithreading; pipeline registers; resistive RAM; resistive random access memory; CMOS integrated circuits; Memristors; Metals; Pipelines; Random access memory; Registers; Resistance; Flip flop; memristive device; memristor; multithreading; resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2347926
  • Filename
    6902822