DocumentCode
743345
Title
Stability Analysis of a Planar Multiple-Beam Circuit for
-Band High-Power Extended-Interaction Klystron
Author
Suye Lu ; Changqing Zhang ; Shuzhong Wang ; Yong Wang
Author_Institution
Univ. of Chinese Acad. of Sci., Beijing, China
Volume
62
Issue
9
fYear
2015
Firstpage
3042
Lastpage
3048
Abstract
Circuit analysis of a multiple-beam version of a high-power extended-interaction klystron is performed. The circuit is based on the barbell cavity with five coplanar electron beams across the transverse section of the cavity. Although the basic circuit design is straightforward, stable operation is challenging due to the mode competition and the self-oscillation in an oversized multiple-gap cavity driven by multiple beam sources. The 3-D particle-in-cell (PIC) simulation technology and the space-charge wave theory were exploited to analyze the stability. The physical design of the interaction system was accomplished with the beam parameters of voltage 19 kV and of overall current 4 A (0.8 A × 5). PIC results show that a power of 11.28 kW can be achieved at a frequency of 94.48 GHz with an instantaneous 3-dB bandwidth of 160 MHz. The corresponding gain and electric efficiency are 55.75 dB and 14.84%, respectively.
Keywords
electron beams; klystrons; millimetre wave tubes; space charge waves; stability; 3-D particle-in-cell; PIC simulation technology; W-band high-power extended-interaction klystron; bandwidth 160 MHz; barbell cavity; circuit analysis; coplanar electron beam; current 4 A; efficiency 14.84 percent; frequency 94.48 GHz; gain 55.75 dB; multiple beam source; multiple-gap cavity; planar multiple-beam circuit; power 11.28 kW; self-oscillation; space-charge wave theory; stability analysis; voltage 19 kV; Cavity resonators; Circuit stability; Couplings; Electron beams; Integrated circuit modeling; Oscillators; Stability analysis; Barbell cavity; extended-interaction klystron (EIK); mode competition; particle-in-cell (PIC) simulation; planar multiple beams; planar multiple beams.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2435031
Filename
7118171
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