• DocumentCode
    743729
  • Title

    Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design

  • Author

    Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio

  • Author_Institution
    Dept. of Electron., Polytech. Univ. of Catalonia, Barcelona, Spain
  • Volume
    23
  • Issue
    9
  • fYear
    2015
  • Firstpage
    1951
  • Lastpage
    1955
  • Abstract
    Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investigate new design strategies at the circuit and architecture level to improve its performance and reliability. Proactive reconfiguration is an emerging technique oriented to extend the system lifetime of memories affected by aging. In this brief, we present a new approach for static random access memory (SRAM) design that extends the cache lifetime when considering process variation and aging in the memory cells using an adaptive strategy. To track the aging in the SRAM cells we propose an on-chip monitoring technique. Our results show the technique as a feasible way to extend the cache lifetime up to 5X.
  • Keywords
    SRAM chips; ageing; integrated circuit design; integrated circuit reliability; integrated circuit testing; logic design; nanoelectronics; SRAM cells; adaptive proactive reconfiguration; aging-aware SRAM cache design; cache lifetime; memory cells; nanoscale circuits; on-chip monitoring technique; process variation; process-variability-SRAM cache design; static random access memory; system lifetime; Aging; Monitoring; SRAM cells; Temperature measurement; Transistors; Very large scale integration; Adaptive proactive reconfiguration; aging sensor; process variation; reliability; static random access memory (SRAM);
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2355873
  • Filename
    6915734