DocumentCode
743972
Title
Resonant-Switched Capacitor Converters for Chip-Scale Power Delivery: Design and Implementation
Author
Kesarwani, Kapil ; Sangwan, Rahul ; Stauth, Jason T.
Author_Institution
Thayer Sch. of Eng. at Dartmouth, Hanover, NH, USA
Volume
30
Issue
12
fYear
2015
Firstpage
6966
Lastpage
6977
Abstract
There is an increasing need for power management systems that can be fully integrated in silicon to reduce cost and form factor in mobile applications, and provide point-of-load voltage regulation for high-performance digital systems. Switched-capacitor (SC) converters have shown promise in this regard due to relatively high energy-density of capacitors and favorable device utilization figures of merit. Resonant switched-capacitor (ReSC) converters show similar promise as they benefit from many of the same architectures and scaling trends, but also from ongoing improvements in mm-scale magnetic devices. In this study, we explore the design and optimization of 2:1 step-down topologies, based on representative capacitor technologies, CMOS device parameters, and air-core inductor models. We compare the SC approach to the ReSC approach in terms of efficiency and power density. Finally, a chip-scale ReSC converter is presented that can deliver over 4 W at 0.6 W/mm2 with 85% efficiency. The two-phase, nominally 2:1 converter supports input voltages from 3.6-6.0 V, and is implemented in 180-nm bulk CMOS with die-attached air-core solenoid inductors.
Keywords
CMOS integrated circuits; inductors; resonant power convertors; switched capacitor networks; switching convertors; CMOS device; capacitor energy-density; chip-scale ReSC converter; chip-scale power delivery; complementary metal oxide semiconductor; cost reduction; die-attached air-core solenoid inductor; efficiency 85 percent; figures of merit; form factor reduction; high-performance digital system; mm-scale magnetic device; mobile application; point-of-load voltage regulation; power density; power management system; resonant SC converter; resonant-switched capacitor converter; silicon; size 180 nm; step-down topology; voltage 3.6 V to 6.0 V; Capacitance; Capacitors; Inductors; Resistance; Resonant frequency; Switches; Topology; DC-DC power converters; microprocessor power delivery; monolithic converters; resonant switched capacitor converters; switched capacitor converters;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2014.2384131
Filename
6991543
Link To Document