DocumentCode :
743983
Title :
Heterostructures for Optoelectronics: History and Modern Trends
Author :
Alferov, Zhores
Author_Institution :
Nanotechnol. Res. & Educ. Center, St. Petersburg, Russia
Volume :
101
Issue :
10
fYear :
2013
Firstpage :
2176
Lastpage :
2182
Abstract :
Semiconductor revolution of the 20th century determined not only technological, but also social development of the modern society. The precursors of modern semiconductor electronics were Oleg Losev´s discoveries of “crystadine” and “light-emitting diode (LED)” nearly 100 years ago. Creation of the transistor and semiconductor laser and LED based on the homo p-n structure became the most decisive step. Semiconductor optoelectronics was born with the creation of GaAs and GaAsP lasers and “LED.” The possibility to control the type and level of conductivity and injection in p-n junctions was the seed from which semiconductor electronics developed. Heterostructures-“man-made crystals”-solved a more general problem: the necessity to control electron and photon fluxes in crystals. The development of physics and technology for semiconductor heterostructures resulted in drastic changes in our everyday life. It is hardly possible to imagine our recent life without double-heterostructure (DH) laser-based telecommunication systems, without efficient DH LEDs, heterostructure bipolar transistors, and high electron mobility transistors (HEMTs) for high-frequency applications. DH lasers were introduced in every household with CD players. Heterostructure solar cells have been widely used for space and terrestrial applications. The first proposals for heterostructures in semiconductor devices were made as early as in the 1950s, but the most important experimental results were received at the end of the 1960s when the first ideal AlGaAs heterostructures and low threshold room-temperature lasers, efficient heterostructure LEDs, and solar cells were created. Later semiconductor heterostructure became laboratories of low-dimension electron gases. Molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) technologies were the basis for the development of new structures, including superlattices, and for- the industrial production of a large family of heterostructure semiconductor devices. Quantum dot (QD)-based optoelectronics as a modern trend in optoelectronics is the subject of a more detailed consideration.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; p-n heterojunctions; semiconductor superlattices; AlGaAs; AlGaAs heterostructures; CD players; DH LED; HEMT; MBE; MOCVD; chemical vapor deposition; double-heterostructure laser-based telecommunication systems; electron flux; heterostructure LED; heterostructure bipolar transistors; heterostructure semiconductor devices; heterostructure solar cells; high electron mobility transistors; high-frequency applications; low threshold room-temperature lasers; low-dimension electron gases; man-made crystals; molecular-beam epitaxy; photon flux; quantum dot-based optoelectronics; semiconductor heterostructures; semiconductor optoelectronics; space application; superlattices; terrestrial application; DH-HEMTs; History; Laser modes; Laser theory; Light emitting diodes; Photovoltaic cells; Quantum dots; Quantum well lasers; Semiconductor lasers; Heterojunction; III–V semiconductor; heterostructures; lasers; light-emitting diode (LED); quantum dot (QD); quantum well (QW);
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2013.2274912
Filename :
6587474
Link To Document :
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