Observation of Degenerate One-Dimensional Subbands in Single n-Channel Junctionless Nanowire Transistors

Author

Liuhong Ma ; Weihua Han ; Hao Wang ; Xiang Yang ; Fuhua Yang

Author_Institution

Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China

Volume

36

Issue

9

fYear

2015

Firstpage

941

Lastpage

943

Abstract

We experimentally investigate one-dimensional electron transport in single n-channel junctionless nanowire transistor at low temperature. Current step increases with the gate voltage is clearly observed at the temperature of 6 K, attributed to the electron transport through one-dimensional subbands formed in the nanowire. The height of the first and the fourth steps is half of that of the second and the third steps, resulting from the twofold degeneracy of certain subbands.

Keywords

electron transport theory; field effect transistors; nanoelectronics; nanowires; degenerate one-dimensional subbands; gate voltage; one-dimensional electron transport; single n-channel junctionless nanowire transistors; temperature 6 K; Logic gates; Nanoscale devices; Oscillators; Plasma temperature; Potential well; Silicon; Transistors; Junctionless nanowire transistor; current step; degenerate subband levels; junctionless nanowire transistor; low temperatures; quantum confinement effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2451646

Filename

7145425