Implementation and characterization of the double-gate MOSFET using lateral solid-phase epitaxy

In this paper, a simple high performance double-gate metal oxide semiconductor field effect transistor (MOSFET) using lateral solid-phase epitaxy (LSPE) is experimentally demonstrated and characterized. The thin channel of the double-gate MOSFET was obtained using the high quality LSPE crystallized layer. The fabricated double-gate MOSFET provides good current drive capability and steep subthreshold slope, and they are approximately 350 μA/μm (@ V_ds = 2.5 V and V_gs - V_T = 2.5 V) and 78 mV/dec for the devices with 0.5 μm channel length. Compared to the conventional single-gate transistor, the double-gate NMOSFET fabricated on the LSPE layer has better V_T roll-off characteristics, DIBL effect, and 1.72 times higher current drive. The peak effective electron mobility of the LSPE crystallized layer is approximately 382 cm^-2/V.s.