Large-signal linearity in III-N MOSDHFETs

Author

Tarakji, A. ; Fatima, H. ; Hu, X. ; Zhang, J.-P. ; Simin, G. ; Khan, M. Asif ; Shur, M.S. ; Gaska, R.

Author_Institution

Sensor Electron. Technol. (SET) Inc., Columbia, SC, USA

Volume

24

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

369

Lastpage

371

Abstract

The authors report the output RF signal distortions in the novel SiO/sub 2/-AlGaN-InGaN-GaN metal-oxide-semiconductor double heterostructure FET (MOSDHFET) device structure. Their comparative studies of MOSDHFETs and Schottky gate type DHFETs fabricated on the same wafer show significantly improved RF output signal linearity in MOSDHFETs at high-input signals. At the RF output powers close to saturation, the relative level of the second and third harmonic powers in MOSDHFETs was found to be less than -30 dB, which is about 15-20 dB lower as compared to identical geometry DHFET. This improvement is attributed to a better linearity of the MOSDHFET current-gate voltage characteristics.

Keywords

III-V semiconductors; aluminium compounds; distortion; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; III-N MOSDHFETs; MOS double heterostructure FET; MOS-HFET device; RF output signal linearity; SiO/sub 2/-AlGaN-InGaN-GaN; current-gate voltage characteristics; high-input signals; high-power microwave FET; large-signal linearity; output RF signal distortions; Capacitance; HEMTs; Linearity; MODFETs; MOSHFETs; Microwave FETs; Monitoring; RF signals; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.813355

Filename

1213859