DocumentCode
745358
Title
PVD HfO2 for high-precision MIM capacitor applications
Author
Sun Jung Kim ; Byung Jin Cho ; Ming Fu Li ; Xiongfei Yu ; Chunxiang Zhu ; Chin, A. ; Dim-Lee Kwong
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
24
Issue
6
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
387
Lastpage
389
Abstract
Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10/sup -8/ A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
Keywords
MIM devices; dielectric thin films; hafnium compounds; leakage currents; permittivity; sputtered coatings; tantalum; tantalum compounds; thin film capacitors; PVD HfO/sub 2/; Ta top electrode; Ta-HfO/sub 2/-TaN; TaN bottom electrode; capacitance density; dielectric constant; high-precision MIM capacitor applications; insulator thickness; leakage current densities; linearity coefficient; sputtered HfO/sub 2/; Atherosclerosis; Circuits; Dielectric constant; Dielectrics and electrical insulation; Electrodes; Guidelines; Hafnium oxide; Leakage current; MIM capacitors; Metal-insulator structures;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.813381
Filename
1213865
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