Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

Author

Zhao, J.H. ; Alexandrov, P. ; Li, X.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

24

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

402

Lastpage

404

Abstract

This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-μm n-type epilayers doped to 5.6 × 10/sup 14/ cm/sup -3/ through the use of a multistep junction termination extension. The blocking voltage substantially surpasses the former 4H-SiC SBD record of 4.9 kV. A current density of 48 A/cm² is achieved with a forward voltage drop of 6 V. The Schottky barrier height, ideality factor, and electron mobility for this very thick epilayer are reported. The SBD´s specific-on resistance is also reported.

Keywords

Schottky diodes; current density; electron mobility; power semiconductor diodes; semiconductor device measurement; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 10 kV; 10-kV 4H-SiC Schottky barrier diodes; 115 micron; Schottky barrier height; SiC; SiC power diodes; blocking voltage; current density; electron mobility; forward voltage drop; high-voltage diode; ideality factor; multistep junction termination extension; n-type epilayer; specific-on resistance; Current density; Electron mobility; FETs; Fabrication; Ion implantation; Nitrogen; Schottky barriers; Schottky diodes; Silicon carbide; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.813370

Filename

1213870