DocumentCode
745447
Title
Microplasma breakdown in high-concentration III-V solar cells
Author
Gonzalez, J.R. ; Rey-Stolle, Ignacio ; Algora, Carlos ; Galiana, Beatriz
Author_Institution
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Volume
26
Issue
12
fYear
2005
Firstpage
867
Lastpage
869
Abstract
III-V high-concentration solar cells have demonstrated a significant degree of technological maturity. However, before their implantation on an industrial scale, these devices need to go through many tests in order to prove their reliability. While carrying out these tests in reverse bias, microplasma breakdown was found in these devices. Therefore, this letter presents the microplasma breakdown, never reported before, for III-V solar cells. It gives an explanation to such an anomalous reverse I-V curve and analyzes its future influence in the device degradation.
Keywords
III-V semiconductors; semiconductor device breakdown; semiconductor device reliability; semiconductor devices; solar cells; anomalous reverse I-V curve; device degradation; high-concentration III-V solar cells; microplasma breakdown; semiconductor device breakdown; solar cell reliability; Degradation; Electric breakdown; Epitaxial growth; Gallium arsenide; Optoelectronic devices; Photovoltaic cells; Semiconductor device manufacture; Semiconductor device testing; Solar power generation; Sun; Gallium compounds; manufacturing testing; optoelectronic devices; photovoltaic cell fabrication; photovoltaics cells; semiconductor device breakdown;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.859626
Filename
1546136
Link To Document