• DocumentCode
    745447
  • Title

    Microplasma breakdown in high-concentration III-V solar cells

  • Author

    Gonzalez, J.R. ; Rey-Stolle, Ignacio ; Algora, Carlos ; Galiana, Beatriz

  • Author_Institution
    Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
  • Volume
    26
  • Issue
    12
  • fYear
    2005
  • Firstpage
    867
  • Lastpage
    869
  • Abstract
    III-V high-concentration solar cells have demonstrated a significant degree of technological maturity. However, before their implantation on an industrial scale, these devices need to go through many tests in order to prove their reliability. While carrying out these tests in reverse bias, microplasma breakdown was found in these devices. Therefore, this letter presents the microplasma breakdown, never reported before, for III-V solar cells. It gives an explanation to such an anomalous reverse I-V curve and analyzes its future influence in the device degradation.
  • Keywords
    III-V semiconductors; semiconductor device breakdown; semiconductor device reliability; semiconductor devices; solar cells; anomalous reverse I-V curve; device degradation; high-concentration III-V solar cells; microplasma breakdown; semiconductor device breakdown; solar cell reliability; Degradation; Electric breakdown; Epitaxial growth; Gallium arsenide; Optoelectronic devices; Photovoltaic cells; Semiconductor device manufacture; Semiconductor device testing; Solar power generation; Sun; Gallium compounds; manufacturing testing; optoelectronic devices; photovoltaic cell fabrication; photovoltaics cells; semiconductor device breakdown;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.859626
  • Filename
    1546136