Title :
Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
Author :
Joo, Moon Sig ; Cho, Byung Jin ; Balasubramanian, B. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccrit) above which there is no Fermi-level pinning, and the C crit depends on the underlying gate dielectric material also.
Keywords :
Fermi level; dielectric materials; nickel compounds; stoichiometry; Fermi-level pinning; NiSi; critical ratio; fully silicided gate; gate dielectric material; high-k dielectrics; stoichiometry dependence; Chemical vapor deposition; Dielectric materials; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Moon; Rapid thermal annealing; Silicidation; Silicon; Effective work function; Fermi-level pinning; Ni-silicided gate; fully silicided (FUSI) gate; high-K;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.859631
