Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base

Author

Malm, B. Gunnar ; Haralson, E. ; Suvar, E. ; Radamson, H.H. ; Yong-Bin Wang ; Mikael Ostling

Author_Institution

Dept. of Microelectron. & Inf. Technol., KTHR. Inst. of Technol., Kista, Sweden

Volume

26

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

246

Lastpage

248

Abstract

A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R/sub B/ was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity of the Ni(SiGe:C) silicide layer was 24 μ/spl Omega//spl middot/cm. About 50-100 nm of lateral growth of silicide underneath the emitter pedestal was observed. DC and HF results with balanced f_T/f_max values of 41/42 GHz were demonstrated for 0.5×10μm² transistors.

Keywords

Ge-Si alloys; carbon; electric resistance; elemental semiconductors; heterojunction bipolar transistors; microwave transistors; nickel; semiconductor device metallisation; 41 GHz; 42 GHz; NiSi; NiSi formation; NiSiGe:C silicide layer; SiGe:C; SiGeC HBT; base resistance scaling; fully nickel-silicided extrinsic base; heterojunction bipolar transistors; polycrystalline collector region; polycrystalline emitter region; quasi-self-aligned emitter-base architecture; silicon-germanium; uniform suicide formation; Carbon dioxide; Electrical resistance measurement; Electrodes; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Nickel; Silicidation; Silicides; Silicon germanium; Base resistance; SiGe; SiGeC; carbon; heterojunction bipolar transistors (HBTs); nickel; silicide; silicon–germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.844697

Filename

1408031