Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Author

Lu, Tsung Yi ; Chao, Tien Sheng

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

267

Lastpage

269

Abstract

A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G_M) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G_M of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G_M further to 29% more than the single-poly-Si gate structure without SiN capping layer.

Keywords

MOSFET; electron mobility; interface phenomena; semiconductor technology; stress control; SiN; SiN capping layer; capping nitride; local strain channel nMOSFET; mobility enhancement; single-poly-Si gate structure; stacked a-Si gate; stacked poly-Si gate; stress control technique; transconductance; Capacitive sensors; Degradation; Etching; Fabrication; Germanium silicon alloys; MOSFETs; Silicon compounds; Silicon germanium; Stress; Tensile strain; Mobility; nMOSFET; poly-Si; strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.845499

Filename

1408038