DocumentCode
74589
Title
Laterally Actuated Platinum-Coated Polysilicon NEM Relays
Author
Parsa, Roozbeh ; Lee, Woo Seung ; Shavezipur, M. ; Provine, J. ; Maboudian, Roya ; Mitra, Subhasish ; Wong, H.-S. Philip ; Howe, R.T.
Author_Institution
Texas Instrum., Santa Clara, CA, USA
Volume
22
Issue
3
fYear
2013
fDate
Jun-13
Firstpage
768
Lastpage
778
Abstract
Laterally actuated polycrystalline silicon nanoelectromechanical (NEM) relays with enhanced electrical properties are presented. Due to surface oxidation of polysilicon in room ambient conditions, the relays have a high contact resistance (> 1 GΩ) that requires high drain bias (3-5 V) to break through. The addition of a platinum sidewall coating reduces the on-resistance and the required drain bias to as low as 3 kΩ and 0.1 V, respectively. The platinum coating´s stability is demonstrated by two tests: first, a contact-and-hold test where the relay passes current (~1μA) for up to 155 min and, second, a hot cycling test where the relay survives for over 108 cycles . The NEMS relays are simulated using finite-element analysis, and the models are verified against experimental tests. Furthermore, the relays are configured and tested as a 2 : 1 multiplexer to show their potential as a digital logic component.
Keywords
coatings; contact resistance; elemental semiconductors; finite element analysis; multiplexing equipment; nanoelectromechanical devices; oxidation; platinum; semiconductor device models; semiconductor device testing; semiconductor relays; silicon; stability; ON-resistance; Pt-Si; coating stability; contact resistance; contact-and-hold test; digital logic component; drain bias; electrical properties; finite-element analysis; hot cycling test; laterally actuated platinum-coated polysilicon NEM relays; laterally actuated polycrystalline silicon nanoelectromechanical relays; multiplexer; polysilicon surface oxidation; resistance 3 kohm; room ambient conditions; sidewall coating; voltage 0.1 V; voltage 3 V to 5 V; CMOS integrated circuits; Coatings; Force; Logic gates; Platinum; Power dissipation; Relays; Digital circuits; electrostatic devices; lateral actuation; nanoelectromechanical (NEM) systems; relay;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2013.2244779
Filename
6472001
Link To Document