A 3.1- to 8.2-GHz zero-IF receiver and direct frequency synthesizer in 0.18-μm SiGe BiCMOS for mode-2 MB-OFDM UWB communication

Author

Ismail, Aly ; Abidi, Asad A.

Author_Institution

Electr. Eng. Dept., Univ. of California, Lake Forest, CA, USA

Volume

40

Issue

12

fYear

2005

Firstpage

2573

Lastpage

2582

Abstract

A direct conversion receiver for ultra-wideband (UWB) applications operates for 3.1 to 8.2 GHz and gives a noise figure of 3.3 to 4.1 dB and a conversion gain of 52 dB. The chip includes the RF receive chain and a 16-GHz quadrature VCO to generate seven carrier frequencies from 3.4 to 7.9 GHz. The circuit was fabricated in a 0.18-μm SiGe BiCMOS process and consumes 88 mA from a 2.7-V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; microwave receivers; ultra wideband communication; voltage-controlled oscillators; 0.18 micron; 16 GHz; 2.7 V; 3.1 to 8.2 GHz; 3.3 to 4.1 dB; 3.4 to 7.9 GHz; 52 dB; 88 mA; BiCMOS integrated circuit; RF receiver; SiGe; amplifier noise; direct conversion receiver; direct frequency synthesizer; low-noise amplifier; mode-2 MB-OFDM UWB communication; noise figure; quadrature voltage controlled oscillator; spurs analysis; wideband matching; zero-IF receiver; BiCMOS integrated circuits; Frequency synthesizers; Gain; Germanium silicon alloys; Noise figure; Radio frequency; Silicon germanium; Ultra wideband communication; Ultra wideband technology; Voltage-controlled oscillators; Amplifier noise; SiGe amplifier; direct frequency synthesizer; low-noise amplifier; noise figure; spurs; spurs analysis; ultra-wideband; wideband matching;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.857423

Filename

1546233