DocumentCode
746346
Title
An analytical method for two-dimensional field distribution of a MOS structure with a finite field plate
Author
Chung, S.K. ; Yoo, D.C. ; Choi, Y.I.
Author_Institution
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume
42
Issue
1
fYear
1995
fDate
1/1/1995 12:00:00 AM
Firstpage
192
Lastpage
194
Abstract
An analytical method is presented for two-dimensional field distribution of a MOS structure with a field plate, which allows explicit equations for field components in terms of oxide thickness, depletion width, and field plate length. Useful design curves of breakdown voltage versus substrate impurity concentration with oxide thickness and plate length as parameters are provided
Keywords
MIS devices; electric breakdown; electric fields; impurity distribution; MOS structure; analytical method; breakdown voltage; depletion width; design curves; field components; field plate length; finite field plate; oxide thickness; substrate impurity concentration; two-dimensional field distribution; Breakdown voltage; Design methodology; Dielectric substrates; Equations; Galois fields; Numerical analysis; P-n junctions; Permittivity; Semiconductor impurities; Strips;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370016
Filename
370016
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