A physics-based HBT SPICE model for large-signal applications

Author

Feng, J.J.X. ; Pulfrey, D.L. ; Sitch, J. ; Surridge, R.

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

42

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

8

Lastpage

14

Abstract

A new, physics-based, large-signal SPICE model for graded-base HBT´s is reported. The novelty of the model lies in its use of the emitter-base diode ideality factor to account for the voltage dependencies of the tunneling factor and the barrier height for back injection of electrons. This expedient allows the HBT to be simply represented in SPICE by the regular homojunction BJT macromodule of this stimulator. The usefulness and accuracy of the model are demonstrated by comparisons of simulated and measured data for a graded-base AlGaAs-GaAs HBT: DC I-V data and large-signal switching results from a ring-oscillator circuit are presented

Keywords

SPICE; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; tunnelling; barrier height; electron back injection; emitter-base diode ideality factor; graded-base HBT; homojunction BJT macromodule; large-signal applications; physics-based HBT SPICE model; stimulator; tunneling factor; voltage dependencies; Circuit simulation; Communication switching; Diodes; Heterojunction bipolar transistors; Predictive models; SPICE; Solid modeling; Switching circuits; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370042

Filename

370042