DocumentCode
746765
Title
Finite element analysis of Hall effect and magnetoresistance
Author
Brauer, John R. ; Ruehl, Jeffrey J. ; MacNeal, Bruce E. ; Hirtenfelder, Franz
Author_Institution
MacNeal-Schwendler Corp., Milwaukee, WI, USA
Volume
42
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
328
Lastpage
333
Abstract
This paper shows that the finite element method can be used to compute Hall voltages and electric fields, magnetoresistance, and current flow patterns. The computed Hall voltage is reduced (up to 54%) when the semiconductor geometry is changed from a narrow rod to a wide rod and when the sense electrodes are made of nonzero size. Both two-dimensional and three-dimensional geometries are analyzed
Keywords
Hall effect; electric fields; finite element analysis; magnetoresistance; FEM; Hall effect; Hall voltages; current flow patterns; electric fields; finite element method; magnetoresistance; semiconductor geometry; three-dimensional geometries; two-dimensional geometries; Conductivity; Electrodes; Electrons; Finite element methods; Geometry; Hall effect; Magnetic analysis; Magnetoresistance; Tensile stress; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370061
Filename
370061
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