DocumentCode :
746813
Title :
An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes
Author :
Watanabe, Hirohito ; Tatsumi, Tom ; Ikarashi, Taeko ; Sakai, Akira ; Aoto, Nahomi ; Kikkawa, Takamaro
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Volume :
42
Issue :
2
fYear :
1995
fDate :
2/1/1995 12:00:00 AM
Firstpage :
295
Lastpage :
300
Abstract :
In this new fabrication technology for high-density DRAM´s, an electrode with even-surface amorphous-silicon is changed to one with uneven-surface hemispherical-grained Si (HSG-Si). This fabrication method consists of easily controllable processes: formation of smooth amorphous Si electrodes by low-pressure chemical vapor deposition followed by removal of native oxide and high-vacuum annealing. This annealing process can form HSG-Si covering the entire surface of all types of storage electrodes, including side-wall surfaces which had previously been dry-etched. The resulting storage electrode with HSG-Si can store 1.8 times as much charge as can be stored on an electrode without HSG-Si. Such an increase makes it possible to reduce the height of storage electrodes. This technique is applicable to the fabrication of high-density DRAM´s
Keywords :
DRAM chips; VLSI; annealing; chemical vapour deposition; electrodes; elemental semiconductors; integrated circuit technology; silicon; Si; fabrication technology; hemispherical-grained silicon storage electrodes; high-density DRAMs; high-vacuum annealing; low-pressure chemical vapor deposition; native oxide; side-wall surfaces; Amorphous materials; Annealing; Capacitance; Chemical vapor deposition; Electrodes; Fabrication; Random access memory; Semiconductor films; Silicon; Surface morphology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.370066
Filename :
370066
Link To Document :
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