Quantum-based Simulation analysis of scaling in ultrathin body device structures

Author

Kumar, Arvind ; Kedzierski, Jakub ; Laux, Steven E.

Author_Institution

IBM Semicond. R&D Center, Yorktown Heights, NY, USA

Volume

52

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

614

Lastpage

617

Abstract

We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects.

Keywords

MOSFET; doping profiles; electrostatics; quantum theory; semiconductor device models; silicon-on-insulator; 2D electrostatics; 2D short-channel effects; MOSFET scaling; classical scaling theory; doping profile; fully depleted silicon-on-insulator structures; quantum-based simulation analysis; quantum-mechanical confinement; quantum-mechanical effects; silicon-on-insulator technology; ultrathin body device structures; Analytical models; Dielectrics and electrical insulation; Doping profiles; Electrostatics; Geometry; MOSFET circuits; Potential well; Quantum mechanics; Silicon on insulator technology; Two dimensional displays; MOSFET scaling; Modeling; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.844792

Filename

1408166