Title :
Breakdown analysis of an asymmetrical double recessed power MESFET´s
Author :
Gaquiere, Christopher ; Bonte, B ; Theron, Didier ; Crosnier, Y. ; Arsene-Henri, P. ; Pacou, T.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Villeneuve D´´Ascq, France
fDate :
2/1/1995 12:00:00 AM
Abstract :
FET´s with double stepped gate recess are commonly admitted to be presently a very convenient structure capable to overcome the fundamental power limitation related to the breakdown voltage. The present paper deals with an analysis of a double recessed MESFET with a very good and instructive breakdown performance. For the first time we explain on the basis of gate current observations why the double recess structure allows a large breakdown improvement not only at pinch off voltage but also at open channel. Moreover it is shown that the breakdown optimization is fully compatible with the microwave gain performance
Keywords :
electric breakdown; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; asymmetrical double recessed structure; breakdown analysis; breakdown optimization; double stepped gate recess; microwave gain performance; open channel; pinchoff voltage; power MESFET; Breakdown voltage; Degradation; Doping; Electric breakdown; MESFETs; Ohmic contacts; Performance analysis; Performance gain; Student members; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
