Title :
NBTI degradation and its impact for analog circuit reliability
Author :
Jha, Neeraj K. ; Reddy, P. Sahajananda ; Sharma, Dinesh K. ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
Abstract :
A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.
Keywords :
analogue integrated circuits; circuit simulation; integrated circuit reliability; mixed analogue-digital integrated circuits; thermal stability; NBTI degradation; analog circuit reliability; analog/mixed-signal circuits; bias current; circuit configuration; circuit lifetime; circuit performance; digital-to-analog converters; gain error; negative bias temperature instability; pMOSFET degradation; threshold-voltage shift; Analog circuits; Annealing; Degradation; Digital circuits; MOSFET circuits; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage; Analog/mixed-signal circuits; circuit lifetime; negative bias temperature instability (NBTI); pMOSFET degradation; threshold-voltage shift;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.859570