High-linearity class B power amplifiers in GaN HEMT technology

Author

Xie, Shouxuan ; Paidi, Vamsi ; Coffie, Robert ; Keller, Stacia ; Heikman, Sten ; Moran, Brendan ; Chini, Alessandro ; DenBaars, Steven P. ; Mishra, Umesh ; Long, Stephen ; Rodwell, Mark J.W.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

13

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

284

Lastpage

286

Abstract

A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that class B power amplifiers can achieve IM3 suppression comparable to class A, while providing approximately 10% improved power added efficiency.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; intermodulation; wide band gap semiconductors; 34 percent; GaN; GaN HEMT technology; IM3 suppression; class B MMIC power amplifier; high PAE; high power added efficiency; high-linearity power amplifier; single-ended power amplifier; third-order intermodulation suppression; Bandwidth; Circuit testing; Frequency; Gallium nitride; HEMTs; High power amplifiers; Linearity; MMICs; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.811682

Filename

1214551