An asymmetric two-side program with one-side read (ATPOR) device for MultiBit per cell MLC nitride-trapping flash memories

Author

Wu, Jau-Yi ; Lee, Ming-Hsiu ; Hsu, Tzu-Hsuan ; Kuo, Ming-Chang ; Lung, Hsiang-Lan ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co. Ltd. Hsinchu, Taiwan

Volume

52

Issue

12

fYear

2005

Firstpage

2648

Lastpage

2653

Abstract

An asymmetric two-side program with one-side read (ATPOR) Flash memory device is proposed. In this nitride-trapping device, the interaction of stored charges in the two sides (second-bit effect) is utilized to achieve multilevel cell (MLC) V_t levels with the advantages of relatively small total charge. The small total charge can enhance both programming and erasing efficiency. The ATPOR device with programming and erasing times within 100 ns and 40 μs are demonstrated. Excellent read disturb immunity of ATPOR device can provide high scaling capability. In addition, good data retention and P/E cycling endurance and reliability are achieved. For 2-bit/cell and 3-bit/cell MLC applications, the ATPOR device with tight level distributions less than 100 mV is illustrated.

Keywords

flash memories; read-only storage; 100 ns; 40 mus; ATPOR device; ATPOR flash memory device; P/E cycling endurance; asymmetric two-side program with one-side read device; data retention; erasing time; multilevel cell; nitride-trapping device; nitride-trapping flash memory; programming times; second-bit effect; stored charges; Channel hot electron injection; Fabrication; Flash memory; Heart; Hot carriers; Lungs; Nonvolatile memory; Threshold voltage; 2-bit/cell; 3-bit/cell; Nitride-trapping device; multilevel cell (MLC); second-bit effect;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.859665

Filename

1546328