UV-SLPT for Gas Sensor Research on MISiC Devices

Author

Klingvall, Roger ; Eriksson, Mats ; Lundström, Ingemar

Author_Institution

Div. of Appl. Phys., Linkoping Univ.

Volume

7

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

592

Lastpage

599

Abstract

A modified Scanning Light Pulse Technique (SLPT) setup that can be used to evaluate SiC-based gas-sensitive field-effect devices is introduced. This is exemplified with measurements on a Pt-MISiC capacitor that has a metal thickness gradient. The device shows large responses to hydrogen and ammonia in air. The H₂ and NH₃ responses show a complementary dependence on the Pt film thickness at 140degC. The temperature dependence differs however for the two gases. The measurement setup uses UV transparent optics together with mechanical chopping of light from a short wavelength light source. The spatial resolution of the system is found to be approximately 50 mum

Keywords

MIS capacitors; ammonia; gas sensors; silicon compounds; wide band gap semiconductors; 140 C; H₂response; MISiC devices; NH₃ response; Pt film thickness; Pt-MISiC capacitor; UV transparent optics; UV-SLPT; ammonia; gas sensor; gas-sensitive field-effect devices; hydrogen; metal thickness gradient; scanning light pulse; short wavelength light source; wide band gap semiconductor; Capacitors; Gas detectors; Gases; Hydrogen; Mechanical variables measurement; Optical films; Optical sensors; Temperature dependence; Thickness measurement; Wavelength measurement; Ammonia; MISiC; Pt; SLPT; UV-SLPT; gas sensors; hydrogen; platinum; scanning light pulse technique; silicon carbide; wide band gap semiconductor;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2007.891954

Filename

4135359