130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation

Author

Siligaris, Alexandre ; Dambrine, Gilles ; Schreurs, Dominique ; Danneville, François

Author_Institution

Centre Nat. de Recherche Scientitique, Villeneuve d´´Ascq, France

Volume

52

Issue

12

fYear

2005

Firstpage

2809

Lastpage

2812

Abstract

In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect and its frequency dispersion, occurring in floating body PD SOI MOSFETs. The model is validated through large-signal measurements, and the nonlinear properties of PD SOI transistors are studied.

Keywords

MOSFET; equivalent circuits; semiconductor device models; silicon-on-insulator; 130 nm; RF modeling; SOI MOSFET; empirical equations; equivalent circuit; frequency dispersion; kink effect; large-signal measurements; linearity properties; nonlinear model; silicon-on-insulator; Active matrix technology; Amorphous silicon; Integrated circuit technology; Linearity; MOSFET circuits; Radio frequency; Semiconductor thin films; Silicon on insulator technology; Stress; Thin film transistors; Kink effect; linearity; nonlinear RF modeling; silicon-on-insulator (SOI) MOSFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.859707

Filename

1546349