DocumentCode
747998
Title
Systematic errors of noise parameter determination caused by imperfect source impedance measurement
Author
Wiatr, Wojciech ; Walker, David K.
Author_Institution
Warsaw Univ. of Technol., Poland
Volume
54
Issue
2
fYear
2005
fDate
4/1/2005 12:00:00 AM
Firstpage
696
Lastpage
700
Abstract
We present a rigorous two-step analysis of systematic errors in the four-noise parameter determination of a two-port network using the cold-source technique. This analysis is based on an original model that accounts for residual errors in the source impedance measurement. The method employs two linear fractional transforms to decompose the errors into relevant factor sets affecting the parameters in different ways. Analyses performed for a low-noise pseudomorphic high-electron mobility transistor (PHEMT) and a microwave amplifier show that the noise parameters of the low-noise PHEMT are highly vulnerable to such errors.
Keywords
electric impedance measurement; high electron mobility transistors; integrated circuit noise; measurement errors; microwave amplifiers; parameter estimation; two-port networks; cold source technique; error analysis; linear fractional transforms; microwave amplifier; microwave field-effect transistors; network analyzer; noise parameter determination; noise parameters; parameter estimation; pseudomorphic high-electron mobility transistor; residual errors; source impedance measurement; systematic errors; two port network; 1f noise; Error analysis; HEMTs; Impedance measurement; Low-noise amplifiers; MODFETs; Microwave amplifiers; Microwave transistors; PHEMTs; Performance analysis; Amplifiers; error analysis; microwave field-effect transistors; modeling; network analyzer; noise; parameter estimation; residual errors;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2005.843534
Filename
1408267
Link To Document