Title :
Analysis of current-mirror MOSFETs for use in total-dose radiation environments
Author :
Martinez, M.J. ; Schrimpf, R.D. ; Galloway, K.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
The suitability of current-mirror MOSFETs (CMFETs) for use in total-dose radiation environments was examined. These devices allow low-loss load-current sensing and have significant potential for use in power integrated circuits. Experiments demonstrated that the ratio of the load current to the sense current was virtually unaffected by ionizing radiation for many operating conditions. In all cases examined, changes in current ratio were largest when the sense resistance was largest, and smallest when the sense voltage was approximately equal to the load-section source voltage. A demonstration circuit was used to verify the feasibility of using feedback to extend the useful life of CMFETs in total-ionizing-dose environments
Keywords :
insulated gate field effect transistors; power transistors; radiation effects; semiconductor device testing; current mirror MOSFET; feedback; ionizing radiation; load current sense current ratio; load-section source voltage; low-loss load-current sensing; power integrated circuits; sense resistance; total-dose radiation environments; Circuit testing; FETs; Feedback circuits; Ionizing radiation; MOSFETs; Power dissipation; Power integrated circuits; Resistors; Semiconductor optical amplifiers; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on