DocumentCode
748335
Title
Short circuit behavior of IGBTs correlated to the intrinsic device structure and on the application circuit
Author
Letor, Romeo ; Aniceto, Giovanni Candeloro
Author_Institution
Discrete & Stand. IC´´s Group, SGS-Thomson Microelectron., Catania, Italy
Volume
31
Issue
2
fYear
1995
Firstpage
234
Lastpage
239
Abstract
Problems associated with the short circuit tolerance of power control circuits can be solved successfully using IGBTs as power switches even when the intrinsic short circuit performance of these devices is modest. The protection circuit of an IGBT with modest short circuit capability is more critical then the protection circuit of a rugged IGBT. On the other hand, IGBTs with the best short circuit performance have the higher operating losses due to their higher saturation voltage. This note demonstrates how the IGBTs and the protection circuit were optimized to get the best trade-off between efficiency, ruggedness, and reliability of the application
Keywords
insulated gate bipolar transistors; power control; power semiconductor switches; protection; short-circuit currents; IGBT; application circuit; efficiency; intrinsic device structure; operating losses; power control circuits; power switches; protection circuit; reliability; ruggedness; saturation voltage; short circuit behavior; Circuit simulation; Circuit testing; Delay; Inductance; Insulated gate bipolar transistors; Power control; Power system protection; Short circuit currents; Switching circuits; Voltage;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/28.370268
Filename
370268
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