• DocumentCode
    748335
  • Title

    Short circuit behavior of IGBTs correlated to the intrinsic device structure and on the application circuit

  • Author

    Letor, Romeo ; Aniceto, Giovanni Candeloro

  • Author_Institution
    Discrete & Stand. IC´´s Group, SGS-Thomson Microelectron., Catania, Italy
  • Volume
    31
  • Issue
    2
  • fYear
    1995
  • Firstpage
    234
  • Lastpage
    239
  • Abstract
    Problems associated with the short circuit tolerance of power control circuits can be solved successfully using IGBTs as power switches even when the intrinsic short circuit performance of these devices is modest. The protection circuit of an IGBT with modest short circuit capability is more critical then the protection circuit of a rugged IGBT. On the other hand, IGBTs with the best short circuit performance have the higher operating losses due to their higher saturation voltage. This note demonstrates how the IGBTs and the protection circuit were optimized to get the best trade-off between efficiency, ruggedness, and reliability of the application
  • Keywords
    insulated gate bipolar transistors; power control; power semiconductor switches; protection; short-circuit currents; IGBT; application circuit; efficiency; intrinsic device structure; operating losses; power control circuits; power switches; protection circuit; reliability; ruggedness; saturation voltage; short circuit behavior; Circuit simulation; Circuit testing; Delay; Inductance; Insulated gate bipolar transistors; Power control; Power system protection; Short circuit currents; Switching circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/28.370268
  • Filename
    370268