SOI transistor measurement techniques using body contacted transistors

Author

Worley, E.R. ; Williams, R.

Author_Institution

Rockwell Int., Newport Beach, CA, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2192

Lastpage

2198

Abstract

Measurements of body-contacted SOI MOS transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation using an ARACOR machine. The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two-dimensional transistor simulator. Two different edge FET characteristics were found; one is associated with the bottom corner and the other with the top corner. The bottom corner FET characteristic is dependent on positive charge trapping at the silicon-insulator interface. It has also been established that the V _t shift with radiation of the top corner edge FET is comparable to the V_t shift of the top FET for the Rockwell SOS3H process

Keywords

X-ray effects; insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; semiconductor technology; semiconductor-insulator boundaries; ARACOR machine; FET characteristics; MOSFET; Rockwell SOS3H process; SOI transistor measurement techniques; X-ray irradiation; back channel transistor; body contacted transistors; island edge transistor; positive charge trapping; threshold shift; Doping; Equations; Integrated circuit technology; Isolation technology; Least squares methods; Measurement techniques; Permittivity measurement; Semiconductor films; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45424

Filename

45424