Title :
Large-Signal Performance and Modeling of Intrinsically Switchable Ferroelectric FBARs
Author :
Seungku Lee ; Lee, Victor ; Sis, Seyit Ahmet ; Mortazawi, Amir
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan at Ann Arbor, Ann Arbor, MI, USA
Abstract :
This paper presents the large-signal performance of intrinsically switchable ferroelectric thin-film bulk acoustic resonators (FBARs), as well as their modeling procedure. There has been a growing interest in ferroelectric FBARs due to their electric-field-dependent permittivity and electric-field-induced piezoelectricity. Ferroelectric barium-strontium-titanate (BaxSr(1-x)TiO3) FBARs are intrinsically switchable, namely, they have resonances that switch on with the application of a dc-bias voltage. In this paper, the large-signal performance and nonlinear behavior of ferroelectric BST FBARs are investigated. Measurement results show that the device nonlinearity can be reduced by applying higher dc-bias voltages. Moreover, a large-signal model that accurately describes the dc-bias voltage, as well as RF power-dependent performance of BST FBARs is developed. Large-signal simulation results obtained from this model at different bias voltages and RF power levels show good agreement with the measurement results.
Keywords :
acoustic resonators; ferroelectric devices; semiconductor device models; BaSrTiO3; RF power-dependent performance; bulk acoustic resonators; dc-bias voltage; electric-field-dependent permittivity; electric-field-induced piezoelectricity; intrinsically switchable ferroelectric thin-film FBAR modeling; large-signal model; large-signal performance; large-signal simulation; Film bulk acoustic resonators; Integrated circuit modeling; Mathematical model; Power measurement; Radio frequency; Resonant frequency; Voltage measurement; Electrostriction; ferroelectric devices; film bulk acoustic resonators (FBARs); large-signal modeling; nonlinear systems;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2225442